vishay siliconix sum110p04-05 document number: 73493 s-80274-rev. b, 11-feb-08 www.vishay.com 1 p-channel 40-v (d-s) mosfet features ? trenchfet ? power mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 40 0.005 at v gs = - 10 v - 110 185 nc ordering information: SUM110P04-05-E3 (lead (pb)-free) to-263 s gd top view drain connected to tab s g d p-channel mosfet notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 40 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d - 110 a a t c = 70 c - 110 a t a = 25 c 39 b, c t a = 70 c 33 b, c pulsed drain current i dm 240 continuous source-drain diode current t c = 25 c i s 110 t a = 25 c 10 b, c avalanche current l = 0.1 mh i as 75 single-pulse avalanche energy e as 281 mj maximum power dissipation t c = 25 c p d 375 w t c = 70 c 262 t a = 25 c 15 b, c t a = 70 c 10.5 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 810 c/w maximum junction-to-case (drain) steady state r thjc 0.33 0.4 rohs compliant
www.vishay.com 2 document number: 73493 s-80274-rev. b, 11-feb-08 vishay siliconix sum110p04-05 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 40 v v ds temperature coefficient v ds /t j i d = - 250 a - 40 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2 - 3 - 4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 10 v - 120 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 20 a 0.0041 0.005 forward transconductance a g fs v ds = - 15 v, i d = - 20 a 75 s dynamic b input capacitance c iss v ds = - 25 v, v gs = 0 v, f = 1 mhz 11300 pf output capacitance c oss 1510 reverse transfer capacitance c rss 1000 total gate charge q g v ds = - 20 v, v gs = - 10 v, i d = - 110 a 185 280 nc gate-source charge q gs 48 gate-drain charge q gd 42 gate resistance r g f = 1 mhz 4.0 tu r n - o n d e l ay t i m e t d(on) v dd = - 20 v, r l = 0.18 i d ? - 110 a, v gen = - 10 v, r g = 1 25 40 ns rise time t r 290 440 turn-off delay time t d(off) 110 165 fall time t f 35 55 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 110 a pulse diode forward current a i sm - 240 body diode voltage v sd i s = - 20 a - 0.8 - 1.5 v body diode reverse recovery time t rr i f = - 20 a, di/dt = 100 a/s, t j = 25 c 70 105 ns body diode reverse recovery charge q rr 130 200 nc reverse recovery fall time t a 37 ns reverse recovery rise time t b 33
document number: 73493 s-80274-rev. b, 11-feb-08 www.vishay.com 3 vishay siliconix sum110p04-05 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 v gs = 10 thru 7 v 4 v v ds - drain-to-source voltage (v) - drain current (a) i d 5 v 6 v 0 20406080100120 v gs = 10 v i d - drain current (a) r ds(on) - on-resistance ( ) 0.010 0.008 0.006 0.004 0.002 0.000 0 2 4 6 8 10 0 40 80 120 160 200 240 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 32 v v ds = 20 v transfer characteristics capacitance on-resistance vs. junction temperature 0 10 20 30 40 0123456 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d c rss 0 2000 4000 6000 8000 10000 12000 14000 16000 0 10203040 c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) r ds(on) - on-resistance (normalized) i d = 20 a v gs = 10 v
www.vishay.com 4 document number: 73493 s-80274-rev. b, 11-feb-08 vishay siliconix sum110p04-05 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 10 0.0 0.3 0.6 0.9 1.2 1.5 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 1 100 t j = 25 c - 0.5 - 0.3 - 0.1 0.1 0.3 0.5 0.7 0.9 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d =10 ma t j - temperature (c) v gs(th) variance (v) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 012345678910 v gs - gate-to-source voltage (v) r ds(on) - drain-to-source on-resistance ( ) t a = 25 c t a = 150 c 0 20 35 5 10 power (w) time (s) 25 0.1 1000 0.01 0.001 0.0001 15 30 100 1.00 10 t c = 25 c safe operating area, junction-to-case - drain current (a) i d limited by r ds(on) * v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified single pulse t c = 25 c 1 ms 10 ms 100 ms dc 10 s 100 s 1 10 100 1000 0.1 110 100
document number: 73493 s-80274-rev. b, 11-feb-08 www.vishay.com 5 vishay siliconix sum110p04-05 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73493. max. avalanche and drain current vs. case temperature* 0 30 60 90 120 150 180 210 240 0 25 50 75 100 125 150 175 i d - drain current (a) t c - case temperature (c) package limited power derating, junction-to-case 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 175 t c - case temperature (c) power (w) normalized thermal transient impedance, junction-to-case 0.001 0.01 1 0.1 0.0001 1 0.1 0.01 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.5 0.05 0.02
document number: 71198 www.vishay.com revison: 03-jan-11 1 package information vishay siliconix to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum features of heat sink tab and plastic. 2. no more than 25 % of l1 can fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. detail a (rotated 90) s ection a-a -a- -b- 0 - 5 d1 a a l1 l4 e b2 b e a c2 c l2 d l3 l m c1 c b1 b detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t10-0738-rev. j, 03-jan-11 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
